碲镉汞焦平面器件CMOS读出电路的发展  

Development of CMOS Readout Circuits for Mercury Cadmium Telluride Focal Plane Array Devices

作　　者：王忆锋[1] 钱明[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外》2011年第7期1-8,共8页Infrared

摘　　要：通过对近年来的部分文献资料进行归纳分析,介绍了碲镉汞焦平面器件CMOS读出电路(ROIC)的发展动态。讨论了读出电路的有关概念。列出了部分前放电路的单元结构,并分析了它们的工作特点。介绍了积分时间、积分电容以及多路传输等因素对读出电路设计的影响。The development status of CMOS readout circuits（ROIC）of mercury cadmium telluride focal plane array devices were reviewed by summarizing and analyzing some papers published in recent years.The related concepts of ROIC were discussed.The unit structures of some preamplifier circuits were listed and their operating characteristics were analyzed.The effects of some factors such as integration time,integration capacitance,multiplexing and etc.on the design of ROIC were presented.

关 键 词：碲镉汞 红外探测器 读出电路 CMOS 

分 类 号：TN215[电子电信—物理电子学]