GaAs光电导开关激子效应的光电导特性  

Photoconductive Characteristics of Exciton Effect upon GaAs Photoconductive Switch

作　　者：马湘蓉[1] 施卫[1] 

机构地区：[1]西安理工大学理学院,陕西西安710054

出　　处：《西安理工大学学报》2011年第2期151-155,共5页Journal of Xi'an University of Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2007CB310406);国家自然科学基金资助项目(50837005;10876026)

摘　　要：从GaAs光电导开关的激子效应和光激发电荷畴理论基础出发,研究了强电场触发下GaAs光电导开关激子效应的光电导特性;光激发电荷畴与激子效应的相互作用以及激子的形成、传输及离解过程形成自由电子和空穴,为激子激发光电导提供了必要的条件。影响激子效应的光电导特性的主要因素有:激子能级的吸收,束缚激子及光激发电荷畴引起的能带重整化效应,多声子跃迁,束缚激子沿位错线发生分裂和漂移。在上述因素的相互耦合作用下,使得GaAs光电导开关激子效应的光电导呈现出一定的振荡特性。Starting from the effect of GaAs Photoconductive Semiconductor Switch（PCSS） exciton and Photo-Activated Charge Domain（PACD） theory,this paper studies photoconductive behaviors of GaAs photoconductive switch exciton effect in the case of strong electric field excitation.The interaction of PACD and exciton effect and exciton formation,transmission and free electrons and holes formed in the process of dissociation can provide the necessary conditions for exciton activated photoconduction.The major factors affecting exciton effect photoconductive behaviors are： exciton energy absorption,bound exciton and PACD induced band gap renormalization,multi-phonon transition,bound exciton split and drift along dislocation stress.In the case of coupling actions by the above factors,the photoconduction of GaAs photoconductive switch exciton effect appears to have a certain oscillation behaviors.

关 键 词：GAAS光电导开关 光激发电荷畴 激子效应 光电导特性 

分 类 号：TN304.23[电子电信—物理电子学]