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出 处:《上海师范大学学报(自然科学版)》2011年第3期245-248,共4页Journal of Shanghai Normal University(Natural Sciences)
摘 要:采用磁控溅射法,选用LaNiO3(LNO)作为缓冲层和电极层,在硅基片上成功地制备出了0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3(PMN-0.26PT)铁电薄膜.X射线衍射(XRD)分析表明薄膜具有沿(110)方向择优取向的钙钛矿结构.利用NKD光谱测试仪测试了薄膜的反射谱,并使用最小二乘法进行拟合分析得到其折射率和消光系数.在沉积温度为500℃时,薄膜具有更为均匀和致密的微观结构.在波长为633 nm时,该薄膜的折射率大小为2.41.薄膜的折射率和消光系数随着光子能量的增加而增加.薄膜的这些光学特性使其有望在低压电光转换器、光波导等器件中应用.0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3(PMN-0.26PT) thin films were prepared on Si substrate with a LaNiO3(LNO) buffer layer by radio-frequency magnetron sputtering.X-ray diffraction(XRD) showed that the films are(110) preferred orientation with pure perovskite structures.The optical reflectance spectra were fitted by the method of least squares.A refractive index of 2.41 at a wavelength of 633 nm was obtained for the thin films deposited at 500 ℃.The Value of n is the largest at all deposition temperature,which is due to more uniform grain structure.Our research indicated that the refractive indices and the extinction coefficient of the thin films increase with the photon energy increasing.These characteristics could make them applied at low-voltage electro-optic switching and optical waveguiding.
关 键 词:PMN-0.26PT薄膜 折射率 消光系数
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