Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer  

作　　者：ZENG FanGuang LI Xin LIU WeiHua QIAO ShuZhen MA HuaLi ZHANG Rui XIA LianSheng CHEN Yi LIU XingGuang ZHANG Huang 

机构地区：[1]Department of Mathematics and Physics, Zhengzhou Institute of Aeronautical Industry Management, Zhengzhou 450015, China [2]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China [3]Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China

出　　处：《Chinese Science Bulletin》2011年第22期2379-2382,共4页

基　　金：supported by the National Natural Science Foundation of China(51072184,50972132,51002143 and 60801022);the Aeronautical Science Foundation of China(2009ZE55003 and 2010ZF55013);the Basic and Advanced Technology Program of Henan(092300410139)

摘　　要：Carbon nanotube(CNT)films were grown on silicon wafers with and without a nickel layer(Si-CNT and Ni-CNT)via the pyrolysis of iron phthalocyanine.The nickel layer was prepared using the electroless plating method.To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission,emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source.For the peak values of the pulsed voltage,which were in the range between 1.62-1.66 MV(corresponding to electric field intensities between 11.57-11.85 V/μm),the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT.By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,the improvement in the emission stability can be easily quantified.The number of emission cycles necessary for the peak current to decay from 100%to 50%increased from^3 for Si-CNT to^11 for a Ni-CNT film.Carbon nanotube （CNT） films were grown on silicon wafers with and without a nickel layer （Si-CNT and Ni-CNT） via the pyro- lysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62-1.66 MV （corresponding to electric field intensities between 11.57-11.85 V/p.m）, the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from -3 for Si-CNT to -11 for a Ni-CNT film.

关 键 词：碳纳米管薄膜 化学镀镍层 发射电流 稳定性 强脉冲 生长 碳纳米管阴极 MARX发生器 

分 类 号：O484.1[理学—固体物理]