常压下用金属有机化学气相沉积法在HP40钢表面制备纳米氧化铝薄膜及表征  

Preparation and Characterization of Nano-Al_2O_3 Films Deposited on HP40 Steel Surface by MOCVD

作　　者：黄志荣[1] 李攀瑜[1] 

机构地区：[1]华东理工大学机械与动力工程学院,上海200237

出　　处：《机械工程材料》2011年第7期58-60,64,共4页Materials For Mechanical Engineering

基　　金：上海市科委资助项目(09dz1203000)

摘　　要：常压下用金属有机化学气相沉积法(MOCVD),以仲丁醇铝(ATSB)为前驱体、氮气为载气在HP40钢表面制备了纳米氧化铝薄膜;用光学显微镜、扫描电子显微镜及能谱仪、X射线衍射仪、原子力显微镜等研究了沉积温度等参数对氧化铝薄膜沉积速率的影响,并对其形貌进行了观察。结果表明:随着沉积温度从503K升高到713K,薄膜沉积速率从0.1mg·cm^(-2)·h^(-1)增加到0.82mg·cm^(-2)·h^(-1);当沉积温度在593～653K范围内,可获得晶粒尺寸为10～15nm的纳米氧化铝薄膜;反应的表观活化能随氮气与ATSB蒸气混合气流速增加而降低,不同的混合气流速有不同的反应级数,ATSB的反应级为0.7±0.02。The nano alumina films on HP40 steel surface were prepared by metal organic chemical vapor deposition （MOCVD） using aluminum tri-sec-butoxide （ATSB） as precursor in nitrogen at atmospheric pressure. The effects of parameters such as deposition temperature on deposition rate of the films had been investigated using optical microscopy, scanning electron microscopy with energy dispersive X-ray spectrometer, X-ray diffraction and atomic force microscopy. The morphology was also observed. The results show that the deposition rate increased from 0. 1 mg · cm^-2 · h^-1 to 0. 82 mg · cm^-2 · h^-1 when deposition temperature increased from 503 K to 713 K. Dense nano-alumina films with grain size of 10-15 nm could be gained when the deposition temperature was in the range of 593-653 K. The apparent activation energy decreased with the increase of the N2-ATSB vapor mixture fldw rate, different mixture flow rates had different reaction orders, and ATSB＇s reaction order was 0. 7 ± 0.02.

关 键 词：金属有机化学气相沉积法 氧化铝 沉积速率 纳米薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程]