Simulation of the light extraction efficiency of nanostructure light-emitting diodes  

作　　者：朱继红 王良吉 张书明 王辉 赵德刚 朱建军 刘宗顺 汪德生 杨辉 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductor,Chinese Academy of Sciences [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第7期446-449,共4页中国物理B（英文版）

基　　金：Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No.60925017);the National Natural Science Foundation of China (Grant Nos.10990100 and 60836003);the National Basic Research Program of China (Grant No.2007CB936700);the National High Technology Research and Development Program of China (Grant No.2007AA03Z401);the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.ISCAS2009T05O9S4050000)

摘　　要：The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-CaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlCaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-CaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlCaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.

关 键 词：light extraction eiffciency InGaN/GaN multiple quantum well NANOSTRUCTURE 

分 类 号：TN312.8[电子电信—物理电子学]