提拉法制备铜单晶研究  

Growth of Bulk Copper Single Crystal by Czochralski Technique

作　　者：娄有信[1] 王继扬[1] 张怀金[1] 李强[2] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]清华大学化学系,北京100084

出　　处：《人工晶体学报》2011年第3期563-566,共4页Journal of Synthetic Crystals

摘　　要：采用提拉法生长出大尺寸（111）铜单晶,晶体尺寸为Ф （12~19）mm×85 mm。通过XRD、金相显微分析讨论了铜单晶的晶体结构与生长缺陷,并采用双臂电桥测定（111）铜单晶的电阻率。结果表明：晶体具有（111）取向、强度高,表明晶体取向良好;蚀坑呈典型三角锥形,位错密度在105~106cm-2之间;在室温下,（111）铜单晶电阻率为1.289×10-8Ω·m。The bulk （111） Cu single crystal with size of 12-19 mm × 85 mm was grown by Czochralski technique. The crystal struture and growth defect of as-grown crystal was investigated by XRD and optical microscope, and the resistivity was measured by Two-arm bridge method. The results demonstrated that the as-grown single crystal had a （111） crystalline orientation. The typical triangle etch pits were observed and its dislocation density was about 10^5-10^6 cm^-2. The resistivity of （111） Cu single crystal was 1. 289× 10^-8 Ω· m at room temperature.

关 键 词：铜单晶 提拉法 晶体生长 晶体缺陷 

分 类 号：O782.5[理学—晶体学]