数值模拟p/i界面对微晶硅薄膜太阳电池性能的影响  

Numerical Simulation of the Effects of p/i Interface on the Performance of Microcrystalline Silicon Thin Film Solar Cells

作　　者：苗丽燕[1] 杨仕娥[1] 李艳阳[1] 陈永生[1] 谷锦华[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2011年第3期599-603,共5页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(No.2006CB202601);河南省自然科学基金(No.072300410080)

摘　　要：采用美国宾州大学开发的AMPS(Analysis of Microelectronic and Photonic Structures)软件模拟了p/i界面缺陷态密度(Npt/i)和非晶孵化层厚度(d)对pin型氢化微晶硅(μc-Si∶H)薄膜太阳电池性能的影响。结果表明:随着Ntp/i的增大,电池的开路电压Voc和填充因子FF单调减小,短路电流Jsc基本不变;随着d的增大,Jsc和FF单调减小,Voc反而增大;Ntp/i和d值的增大均会导致电池光电转换效率η下降。通过对电池内部的电场及能带的分析,对上述模拟结果进行了解释。In this paper,the effects of p/i interface defect state density（Np/it） and the thickness of amorphous incubation layer（d） on the performance of the hydrogenated microcrystalline silicon thin film solar cells was studied by AMPS,which was developed by the University of Pennsylvania in US.The simulation results show that： the open circuit voltage Voc and fill factor FF decrease monotonously while the short circuit current Jsc almost remains constant with the increase of Np/it;the Jsc and FF decrease while the Voc increases with the increase of d.Photoelectric conversion efficiency η decrease with the increase of Np/i t or d.An explanation was given through analysis on the internal electrical field and energy band in the solar cell.

关 键 词：微晶硅薄膜电池 p/i界面 光电转换效率 

分 类 号：O469[理学—凝聚态物理]