掺铁SnO_2陶瓷及薄膜制备研究  

Study on Synthesis of Fe-doped SnO_2 Ceramics and Thin Film Material

作　　者：郭捷[1] 李智东[1] 陈平宇[1] 赵昆渝[1] 

机构地区：[1]昆明理工大学材料科学与工程学院,云南昆明650093

出　　处：《热加工工艺》2011年第14期65-69,共5页Hot Working Technology

基　　金：昆明理工大学学生课外学术科技创新基金(2010YB022)资助

摘　　要：采用PVA-粉体复合法制备SnO2粉末前驱体,固相反应法制备掺铁SnO2陶瓷,通过XRD、SEM和EDS分析表征材料的晶体结构、表面形貌和Fe元素的微区分布状态。考察了烧结温度和Fe掺杂量对制备工艺条件、陶瓷晶体和晶界结构的影响。结果表明,Fe元素的引入,有效降低了SnO2陶瓷的烧结温度,使主晶相和晶界的显微组织清晰;在最佳烧结温度1350℃下制备出了无杂相、致密的,且掺铁量为8at%的SnO2陶瓷;在衬底温度650℃、镀膜氧压4Pa的条件下制备出了质量较好的掺铁SnO2薄膜。Fe-doped SnO2 powder precursor was prepared by PVA powder composite method,and the Fe-doped SnO2 ceramics target material was synthesized by solid reaction process.The crystal structure,surface appearance and the distribution of Fe were analyzed by XRD,SEM and EDS.The influences of sintering temperature and doping level on process conditions,crystal and grain boundary structure were studied.The results show that the doping of Fe can decrease the sintering temperature of SnO2 ceramics,the microstructure of crystal and grain boundary are clear.High purity and density Fe-doped SnO2 ceramics target were synthesized at the optimum doping level of 8at% and sintering temperature of 1350 ℃.The high quality Fe-doped SnO2 thin films were deposited under 650 ℃ substrate temperature and 4 Pa oxygen pressure.

关 键 词：SNO2 掺铁 薄膜 制备 

分 类 号：TB321[一般工业技术—材料科学与工程]