High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs  

作　　者：DU Gang LIU XiaoYan HAN RuQi 

机构地区：[1]Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2011年第8期1756-1761,共6页中国科学（信息科学）（英文版）

基　　金：supported Supported by the National Natural Science Foundation of China(Grant No.60606013);NKBRP 2006CB302705

摘　　要：The high frequency performances of nano-scale ultra-thin-body （UTB） Schottky-barrier n-MOSFETs （SB-nMOSFETs） are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f max.The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are demonstrated.Meanwhile,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case （f T ∝ 1/L2g ）. The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C ds.At ballistic transport limit the f T and f max are almost 10 times larger.The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.The high frequency performances of nano-scale ultra-thin-body （UTB） Schottky-barrier n-MOSFETs （SB-nMOSFETs） are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f max.The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are demonstrated.Meanwhile,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case （f T ∝ 1/L2g ）. The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C ds.At ballistic transport limit the f T and f max are almost 10 times larger.The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.

关 键 词：Monte Carlo ultra thin body （UTB） Schottky-barrier MOSFETs （SB-MOSFETs） high frequency 

分 类 号：TN386.1[电子电信—物理电子学] TN311.7