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作 者:李丽丽[1] 梁齐[1] 史成武[2] 孔明光[3] 李兵[2]
机构地区:[1]合肥工业大学电子科学与应用物理学院,合肥230009 [2]合肥工业大学化学工程学院,合肥230009 [3]中国科学院固体物理研究所材料物理重点实验室,合肥230031
出 处:《真空科学与技术学报》2011年第4期386-392,共7页Chinese Journal of Vacuum Science and Technology
基 金:教育部留学归国人员实验室建设项目(新型微电子学薄膜研究室);国家自然科学基金资助项目(51072043)
摘 要:利用脉冲激光沉积法在玻璃衬底上制备SnS薄膜,研究了SnS薄膜的晶体结构、表面形貌以及有关光学特性。所制备的SnS薄膜样品为斜方晶系多晶结构,在(111)晶面上有很强的择优取向性;衬底温度在100400℃范围内,表面形貌有所区别,随着温度升高,薄膜表面分别呈现大小晶粒共存、片状颗粒、针状颗粒和锥状颗粒的形貌特征;紫外区的SnS薄膜透过率极低,可见光范围的透过率很低,近红外区的透过率较大;样品在可见区和紫外区吸收强烈,吸收系数达105cm-1量级,直接禁带宽度为1.391.46 eV。The SnS films were grown by pulsed laser deposition on glass substrates.The impacts of the growth conditions on its microstructures and optical properties were studied.Its microstructures and optical properties were characterized with X-ray diffraction,atomic force microscopy,and conventional optical probes.The results show that the orthorhombic polycrystalline phase with a preferential growth orientation in(111) dominated the SnS films,and that the substrate temperature strongly affects its surface morphology and optical properties.As the substrate temperature increase from 100℃ to 400℃ the shapes and size distributions of the grains changed markedly.For example,at 100℃,some large grains,200~300 nm in diameter,were surrounded by compact small grains;at 200℃,laminar-shaped grains,about 200 nm,dominated;at 300℃,the needle-shaped compact grains,approximately 16 nm,showed up;and at 400℃,uniformly distributed,cone-shaped grains,around 140 nm in size,were observed.The SnS films with a band-gap of 1.39 to 1.46 eV,have an extremely low transmittance in ultraviolet(UV) range,low transmittance in the visible range,but a high transmittance in near infrared range.Its absorption coefficients in the visible and UV ranges were found to be~105 cm-1.
分 类 号:TN304[电子电信—物理电子学] O484[理学—固体物理]
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