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作 者:陈洁[1] 付亚波[1] 刘宁[1] 卢一平[1] 李廷举[1]
机构地区:[1]大连理工大学材料科学与工程学院,大连116024
出 处:《真空科学与技术学报》2011年第4期495-499,共5页Chinese Journal of Vacuum Science and Technology
摘 要:对定向凝固结合电子束制备5N高纯铜进行了研究。首先采用真空感应熔炼4N(99.99%)阴极铜并进行定向凝固实验,然后利用电子束对定向凝固后的铸锭进行重熔精炼,利用辉光放电质谱仪进行成分分析。实验结果表明:真空熔炼可以有效去除铜中饱和蒸气压高的杂质;通过定向凝固,杂质元素含量沿铸锭轴向逐渐升高;经过组合工艺提纯后,总杂质含量由13.6×10-6降低至4.0×10-6,铜的纯度提高至99.9996%。A novel technique has been successfully developed to further purify the cathode copper(4N purity) into 5N purity copper via vacuum metallurgy.In the technique,the cathode copper is vacuum melted by induction current,followed by directional solidification and electron beam refining.The impacts of the vacuum metallurgy conditions on the impurity contents were characterized with glow discharge mass spectroscopy.The results show that the newly-developed technique effectively removes the impurities with fairly high vapor pressures in vacuum melting.In directional solidification,the major impurity species segregated along the copper ingots growth direction.We found that the newly-developed technique reduced the total impurity content from 13.6×10-6 to 4.0×10-6,and increased the copper purity up to 99.9996%,respectively.
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