浅电子陷阱掺杂对AgCl中光电子衰减特性的影响  

Influence of shallow electron traps doping on characteristics of photoelectron decay in AgCl

作　　者：代秀红[1] 李新政[1,2] 董国义[1] 李晓苇[1] 杨少鹏[1] 韩理[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]河北科技大学理学院,河北石家庄050018

出　　处：《光电子．激光》2011年第8期1255-1258,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10354001);教育部科学技术研究重点资助项目(01011);河北省自然科学基金资助项目(603138);河北大学科研基金资助项目(2005Q05)

摘　　要：利用微波吸收介电谱检测技术,对均匀掺杂[Ru(CN)6]4-的立方体AgCl微晶中自由和浅束缚光电子时间分辨谱进行了检测。实验结果表明,样品曝光后,光生电子数量达到极大值所需时间随掺杂浓度增加逐渐变长;且随掺杂浓度的增加,自由光电子衰减时间逐渐从未掺杂时的157ns延长至1 071ns。在分析光电子衰减曲线时发现,掺杂影响光电子的前期和后期衰减过程,主要是后期过程;且随掺杂浓度增加,光电子的前期和后期衰减都逐渐变慢。通过对比掺杂[Fe(CN)6]4-的研究结果发现,掺杂[Ru(CN)6]4-引入了浅电子陷阱(SETs),其深度较[Fe(CN)6]4-的浅。By microwave absorption and dielectric spectrum measurement technique, the decay spectra of the free and shallow-trapped photoelectrons in cubic AgCl microcrystals doped with [Ru（CN）6]4- are measured. The results show that the time when the amount of free photoelectrons arrives to its maximum becomes longer with doping concentration increasing after exposure, and the free photoelectron decay time increases from 157 ns to 1071 ns. By analyzing the photoelectron decay curve,it is also obtained that the doping has effect on the earlier and latter decay sections, mainly the latter section, and the two decay sections become slower with the doping concentration increasing Compared with the doping of [Ru（CN）6]4-,it is shown that the doping center of [Ru（CN）6]4- introduces shallow electron traps,which is lower than that of [Ru（CN）6]4-.

关 键 词：微波吸收介电谱 掺杂浓度 光电子衰减 浅电子陷阱(SETs) 

分 类 号：O433[机械工程—光学工程]