三氧化钨薄膜的红外发射率调制技术  

Infrared emissivity modulation technology of WO_3 thin film

作　　者：路远[1] 冯万鼎[1] 乔亚[1] 

机构地区：[1]脉冲功率激光技术国家重点实验室,安徽合肥230037

出　　处：《红外与激光工程》2011年第7期1221-1224,共4页Infrared and Laser Engineering

基　　金：安徽省红外与低温等离子体重点实验室基金(2010A001004D)

摘　　要：研究了利用载流子对材料表面的红外发射率进行调制的方法。根据电磁波理论,讨论了物体表面的发射率与折射率的关系,折射率大的物体发射率低。物质的折射率与其中的载流子浓度有关,通过控制载流子的浓度可以对材料的发射率进行调制。以磁控溅射方法在ITO玻璃上制备了氧化钨薄膜。利用电化学方法对三氧化钨薄膜进行了H+离子和电子的注入和抽取,此薄膜中载流子的浓度发生了变化。在着色态,三氧化钨薄膜具有较高的光谱反射率;在褪色态,三氧化钨薄膜具有较低的光谱反射率。结果表明,通过控制材料中载流子的浓度可以对材料的红外发射率进行调制。The infrared emissivity modulation method by controlling the carriers in material was studied.Based on the theory of electromagnetic wave,the relationship between emissivity and refractive index was discussed.The object with higher refractive index had lower emissivity.The refractive index of a material had relationship with the carrier concentration in it.The emissivity of material could be modulated by controlling the carrier concentration.Magnetron sputtering method was used to prepare WO3 thin film on ITO glass.The H＋ ions and electrons were injected into or extracted out of the film by electrochemical method.The carrier concentration in the film was changed.It had a higher spectral reflectivity with the film of bleached,and a lower spectral reflectivity when the film is colored.The results show that the infrared emissivity can be modulated by controlling the carrier concentration.

关 键 词：红外发射率 折射率 调制 三氧化钨薄膜 

分 类 号：TN21[电子电信—物理电子学]