Nb5＋掺杂改性CaBi4Ti4O15压电陶瓷的研究  

Nb^(5+) Modified CaBi_4Ti_4O_(15) Piezoelectric Ceramics

作　　者：洪燕[1] 李月明[1] 沈宗洋[1] 王竹梅[1] 廖润华[1] 李润润[1] 刘虎[1] 

机构地区：[1]景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333403

出　　处：《陶瓷学报》2011年第2期224-227,共4页Journal of Ceramics

摘　　要：采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。Leadless CaBi4Ti（1-x）NbxO15（x=0.00-0.05,CBT-N） bismuth-layered structural piezoelectric ceramics was prepared by solid state sintering process. Effects of Nb5＋ doping on the piezoelectric and dielectric properties of CBT ceramics were studied. Results showed： the doping of Nb5＋ improved the sintering properties and density of CBT ceramics; the addition of Nb2O5 lowered the dielectric loss and improved the piezoelectric and dielectric properties. When the doping amount x=0.04, the CaBi4Ti0.95Nb0.04O15 bismuth-layered structural ceramics as-prepared exhibited excellent piezoelectric properties：d33=14pC/N, Qm=3086, εr=212, tanδ=0.0041, kt/kp=1.681.

关 键 词：铋层状 介电性能 压电性能 CaBi4Ti4O15 

分 类 号：TQ174.75[化学工程—陶瓷工业]