退火对反应离子镀ITO薄膜光学特性的影响  

Influence of Annealing to the ITO Thin Film Optic Characteristics in Reacting Ionic Plating

作　　者：李誉明 高强[1] 

机构地区：[1]86176部队14分队

出　　处：《山西师大学报（自然科学版）》1999年第2期27-31,共5页Journal of Shanxi Teachers University(Natural Science Edition)

摘　　要：选用R.I.P.工艺,以Sn、In为蒸发物.以Gs-I型全息干板为基片,在200℃的条件下制备出ITO薄膜.经退火处理表明:退火有助于提高ITO薄膜的可见、近红外光的透射率,但退火温度有一阈值;退火不利于提高ITO薄膜的近红外反射率.The ITO thin film was made under the condition of 200 C by R. I. P technology with Sn and In as evaperating agents and with Gs-I holoplate as base board. It is demonstrated through annealing that annealing is favorable for the transmitting rate of visible and near-infrared rays in ITO thin film, but the annealing temperature has a threshold value. Annealing is unfavorable for enhancing to the reflecting rate of near-infrared ray in ITO thin film.

关 键 词：反应离子镀 ITO薄膜 退火 光学特性 

分 类 号：O484.41[理学—固体物理]