半导体放电管多元胞结构模型研究  

A Study on the Multi Cell Structure Model for Semiconductor Arrester

作　　者：王惠刚[1] 余岳辉[1] 刘凤美[1] 彭昭廉[1] 

机构地区：[1]华中理工大学电子科学与技术系

出　　处：《华中理工大学学报》1999年第12期11-12,15,共3页Journal of Huazhong University of Science and Technology

摘　　要：在半导体放电管的版面设计上提出了多元胞结构版图．对多元胞结构“短路模型”进行了理论分析和实验验证，结果表明合理设计多元胞版图尺寸和ｐ 基区薄层电阻可以改善器件的转折导通特性，从而为简化半导体放电管生产工艺提供了依据．A novel multi cell structure for semiconductor arrester is proposed. The model of “short” for multi cell semiconductor arrester has been studied theoretically and experimentally. It is concluded that the break over characteristics can be improved by properly selecting the size of cells and the lateral resistance of p base.

关 键 词：多元胞 浪涌能力 半导体放电管 版面设计 

分 类 号：TN130.1[电子电信—物理电子学]