添加Ta2O5对锂铌钛系微波介质陶瓷性能的影响  

EFFECT OF Ta_2O_5 DOPING ON MICROWAVE DIELECTRIC PROPERTIES OF LiNb_(0.6-z)Ta_zTi_(0.5)O_3 CERAMICS

作　　者：喻佑华[1] 王相惠[1] 周川钧[1] 杨俊瑞[1] 张岚[1] 宗瑞[1] 

机构地区：[1]景德镇陶瓷学院,材料科学与工程学院,景德镇333001

出　　处：《中国陶瓷》2011年第8期28-30,35,共4页China Ceramics

摘　　要：添加Ta2O5对LiNb0.6-zTazTi0.5O3陶瓷进行改性研究,文中探讨了Ta2O5对LiNb0.6-zTazTi0.5O3陶瓷烧结性能,显微结构和微波介电性能的影响。结果表明:添加Ta2O5样品的εr略微降低、Q.f值提高、τf略微增大,LiNb0.4Ta0.2Ti0.5O3配方在1160℃保温2h制得样品的微波介电性能非常良好,εr=63.5、τf=+25 ppm/℃、Q.f=7490GHz。Ta2O5 was introduced into the LiNb0.6-zTazTi0.5O3 ceramic as dopant. The effects on sintering performance, microstructure and microwave dielectric properties with different amount of Ta2O5 in the LiNb0.6-zTazTi0.5O3 ceramic were investigated. The results indicate that the density and dielectric constant remains steadily when doping Ta2O5.The Q. f value increased with the doping of Ta2O5, while εr and τf decreased slowly with larger amount of additives. The dielectric properties εr=63.5, τf=＋25ppm/℃, Q·f=7490GHz were obtained for the sample of LiNb0.6-zTazTi0.5O3 and the sintering temperature is at 1160℃.

关 键 词：微波介质陶瓷 锂铌钛体系 Ta2O5掺杂 介电性能 

分 类 号：TQ174.756[化学工程—陶瓷工业]