高压铝阳极氧化膜的陷阱浓度与隧穿导电  

The trap concentration and tunnel conductance in aluminum anode oxidized films under high field.

作　　者：袁战恒[1] 徐友龙[1] 曹婉真[1] 邵祖发[1] 

机构地区：[1]西安交通大学,陕西西安710049

出　　处：《电子元件与材料》1999年第6期11-13,共3页Electronic Components And Materials

摘　　要：通过对铝阳极氧化膜Ｉ－Ｖ特性进行导电机理分析， 比较不同Ｒ（Ｏ∶Ａｌ） 及不同杂质含量氧化膜的Ｉ－Ｖ特性， 发现不能形成受主、施主掺杂的杂质离子， 对空间电荷限制电流作用没有贡献， 而且会降低氧化膜的隧穿起始电压， 增加额定工作电压下的漏电流。ELECTRONIC COMPONENTS & MATERIALS (China), Vol 18, No 6, P 11 13 (Dec 1999) In Chinese The mechanism of conduction is investigated through the I V characteristics of aluminum anode oxidized film, and the I V characteristics with different O Al ratio and different impurity content are compared. It is revealed that the impure ions that can not form deep acceptor or deep donor levels do not contribute to the limitation of space charge, but result in increased leakage current at rated voltage.(5 refs.)

关 键 词：铝 阳极 氧化膜 陷阱浓度 

分 类 号：TN604[电子电信—电路与系统]