CMP过程磨粒压入芯片表面深度的影响因素分析  

Factors Influencing Indentation Depth of a Particle into Wafer Surface in CMP

作　　者：蒋建忠 袁晓林[2] 赵永武 

机构地区：[1]江南大学,无锡214122 [2]常州轻工职业技术学院,常州213004

出　　处：《中国机械工程》2011年第15期1783-1787,共5页China Mechanical Engineering

基　　金：江苏省自然科学基金资助项目(BK2004020);教育部回国人员启动基金资助项目(教外司留[2004]527号);清华大学摩擦学国家重点实验室开放基金资助项目(SKLT04-06);江南大学重大基金资助项目(207000-21054200);江南大学预研基金资助项目(207000-52210434)

摘　　要：根据芯片/磨粒/抛光盘三体接触当量梁的弯曲假设,建立了更加准确合理的CMP过程磨粒压入芯片表面深度的理论模型。新模型包含了更加丰富的信息,包括磨粒的直径、磨粒的浓度、磨粒的密度、抛光盘的弹性模量、芯片的表面硬度,特别是磨粒的浓度和密度的影响,在前人的模型中往往被忽视。最后对理论模型进行了试验验证,结果表明,理论预测规律与试验结果基本一致。In accordance with hypothesis of the equivalent beam bending for a three body contact among pad/wafer/particles,a more precise and reasonable mathematical model about the indentation depth of a particle into wafer surface in CMP was developed.The model comprehensively considered the influences of most valuables in CPM process including pad elastic modulus,wafer surface hardness,particle diameter,particle density and particle concentration.Among these valuables,particle diameter and particle density were often omitted in former models,which will lead to theoretical deviation.Finally,after the experimental validation,it is found that the theoretical value predicted by the model agrees well with the result of the experiments.

关 键 词：机械化学抛光 磨粒 建模 芯片 

分 类 号：TG115.5[金属学及工艺—物理冶金] O484.4[金属学及工艺—金属学]