砷化镓表面硫钝化技术的研究进展  

Research Progress of Sulfur Passivation Technique on the Surface of GaAs

作　　者：刘传军 赵权 

机构地区：[1]电子四十六所,天津300220

出　　处：《半导体情报》1999年第6期12-16,共5页Semiconductor Information

摘　　要：综述了国内外砷化镓表面硫钝化技术的研究现状和发展趋势， 并对其钝化机理及钝化方法等进行了介绍。This paper describes the current status and tendency of sulfur passivation technique on the surface of GaAs,introduces its mechanism and methods and gives some suggestions on sulfur passivation technique on the surface of GaAs in China.

关 键 词：表面钝化 硫钝化技术 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]