Ce_3Rh_2X_2(X=Ga,Ge)的磁性模拟和晶场效应研究  

Magnetism simulation and crystalline electric field effect of Ce_3Rh_2X_2(X=Ga,Ge)

作　　者：路莹[1] 刘伟[2] 

机构地区：[1]洛阳师范学院物理系,河南洛阳471022 [2]安阳工学院软件学院,河南安阳455000

出　　处：《磁性材料及器件》2011年第4期23-25,共3页Journal of Magnetic Materials and Devices

基　　金：河南省教育厅基金资助项目(2009B590001;2010B140010)

摘　　要：根据晶场理论,通过对Kaczorowski研究小组磁化率倒数与温度关系曲线的模拟,得到了稀土化合物Ce3Rh2Ga2和Ce3Rh2Ge2的晶场分裂能和相应波函数,它们的第一激发能和总激发能分别为3.62 meV,39.0meV和11.7 meV,61.5meV。计算表明,Kramers离子Ce3+在晶场效应的作用下,基态简并部分消除,得到了Kramers双重态,模拟得到的化合物的磁化率倒数与温度关系曲线与实验曲线吻合很好,为进一步研究Ce3Rh2Ga2和Ce3Rh2Ge2的磁结构提供了参考。Based on crystalline electric field （CEF） theory, we simulated the temperature dependence of inverse magnetic susceptibility measured by Kaczorowski group before. We obtained CEF splitting levels and corresponding wave functions for rare earth compounds Ce3Rh2X2（X=Ga,Ge）. The first excited and the total excited energies are estimated to be about 3.62meV, 39.0meV for Ce3Rh2Ga2, and 11.7meV, 61.5meV for Ce3Rh2Ge2, respectively. The calculation indicated that under the action of CEF effect, degenerate ground state of Kramers ion Ce3＋ is eliminated, and becomes a doublet ground state. Overall, our results are in good agreement with the experimental data. This study provides a reference for the research of magnetic structures of Ce3Rh2Ga2 and Ce3Rh2Ge2.

关 键 词：Ce3Rh2Ga2 Ce3Rh2Ge2 磁化率 晶场效应 

分 类 号：O482.5[理学—固体物理]