单相共筒式SF_6气体绝缘装置母线温度场计算  

Temperature Filed Calculation of Single-phase SF_6 Gas Insulated Switchgear Bus

作　　者：朱亚飞 罗晓庆[2] 张改杰 

机构地区：[1]孝感市供电公司,湖北孝感432000 [2]武汉大学电气工程学院,湖北武汉430072

出　　处：《陕西电力》2011年第7期9-12,共4页Shanxi Electric Power

基　　金：科技部科学技术创新项目(2010NCSIE-9731);教育部博士点基金项目(20100141120026)

摘　　要：以4 kA单相GIS母线为研究对象,根据发热机理通过建立数学模型分析了该GIS母线的温度场分布;建立有限元模型计算母线的涡流损耗,并将损耗结果间接耦合至温度场与流场。分析结果显示,在单相GIS母线中温度场呈对称分布,最低温度出现于外壳底部,最高温度出现在母线导体顶端,导体正上方位置SF6气体流速最高,导体下方流体流速接近于零。仿真结果与实验室数据的对比验证了计算的准确性。最后,模拟故障情况,分析了不同接触电阻情况下母线外壳温度分布的变化状况,为GIS母线温度在线监测提供了参考。This paper established mathematical model to analyze temperature distribution of the 4kA single-phase GIS bus. Finite element method is used to calculate power loss, which indirectly coupled to temperature and flow field. Analysis result illustrates that the temperature field distribution is symmetric, lowest temperature is at the bottom of the enclosure, while the highest is on the top of the conductor. The highest flow speed comes up over the conductor and at the bottom of the enclosure, the SF6 gas is almost static,. Comparing the simulation result and experiment data, the coincidence shows the accuracy of the calculation. At the end of the paper, different contact resistance of bus conductor, as simulated failure, are assumed to estimate temperature change on the surface of the enclosure, which supported temperature on-line monitoring for GIS bus contact in theory.

关 键 词：GIS母线 数学模型 温度场分布 涡流损耗 接触电阻 

分 类 号：TM135[电气工程—电工理论与新技术]