基于巨磁阻抗效应的微磁传感器设计与实现  

Design and Fabrication of Micro-Magnetic Sensors Based on the Giant Magneto-Impedance Effect

作　　者：杨慧[1,2] 王三胜[1,2] 郭恺[1,2] 褚向华[1,2] 徐炎[1,2] 

机构地区：[1]北京航空航天大学仪器科学与光电工程学院功能材料与器件研究室,北京100191 [2]北京航空航天大学中英空间科学技术联合实验室,北京100191

出　　处：《微纳电子技术》2011年第8期507-510,共4页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2009AA03Z207);国家自然科学基金资助项目(50602027);北京市自然科学基金资助项目(1102024);北京市科技新星计划资助项目(2008A020)

摘　　要：介绍了非晶带产生巨磁阻抗(GMI)效应的机理,对Co基非晶带进行了磁场后退火处理,磁阻抗比得到显著提高,为179%。在此基础上设计了一种基于GMI效应的磁传感器电路,详述了各个环节的电路设计。通过优化传感器电路相关的工作参数,改善了传感器输出性能并给出了典型结果。在常温下,非晶带激励电流频率为10MHz时得到了非晶带的最佳激励电流幅值,为15mA,并测得H-V转换曲线。传感器在开环和闭环下进行了对比试验,在测量磁场范围±1Oe(1A.m-1=4π×10-3Oe)内得到磁传感器灵敏度为219mV/Oe,线性度为10.8%。其在弱磁探测领域有较好的应用前景。The mechanism of the giant magneto-impedance（GMI） effect in amorphous ribbons was presented firstly,the GMI ratio of the Co-based amorphous ribbon was increased by 179% after post-annealing treatments in the magnetic field.A magnetic sensor circuit based on the GMI effect was designed,and every part of the circuit was introduced in detail.The performances of the sensor were improved by optimizing the working parameters and some typical results were given.At room temperature,the optimization exciting current amplitude of 15 mA was obtained with the exciting sine current frequency of 10 MHz,and the H-V convert curve was obtained.The comparison experiments at the conditions of open-loop and close-loop were carried out.The sensitivity of the magnetic sensor is 219 mV/Oe and the linearity is 0.8% in the magnetic field range of ±1 Oe（1 A·m-1=4π×10-3 Oe）.Therefore,the sensor can be widely used in the field of weak magnetic measurement.

关 键 词：磁传感器 巨磁阻抗(GMI) 磁场退火 激励电流 灵敏度 线性度 

分 类 号：TP212.13[自动化与计算机技术—检测技术与自动化装置]