Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers  

作　　者：LI Yan JIE Wanqi KANG Renke GAO Hang 

机构地区：[1]State Key laboratory of Solidification Processing, Northwestern Polytechnical University, Xi＇an 710072, China [2]Key Laboratory for Precision and Non-Traditional Machining Technology （Ministry of Education of China）, Dalian University of Technology, Dalian 116024, China

出　　处：《Rare Metals》2011年第4期381-386,共6页稀有金属（英文版）

基　　金：supported by the Key Project of the National Natural Science Foundation of China (No. 50535020);the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University (No. SKLSP200902)

摘　　要：The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a peak of frictional coefficient at the early stage of scratch, and increasing the vertical force will result in the increase of peak value correspondingly. The fluctuation phenomenon of frictional coefficient is generated at high vertical force. The lateral forces show the apparent twofold and threefold symmetries on （110） and （111） planes, respectively. To obtain high surface quality, low polishing pressure and hard direction （〈 T10 〉 directions on （110） plane and 〈 112 〉 directions on （111） plane） should be selected, and to achieve high material removal rate, high polishing pressure and soft direction （〈001〉 directions on （110） plane and 〈 121 〉 directions on （111） plane） should be selected.The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a peak of frictional coefficient at the early stage of scratch, and increasing the vertical force will result in the increase of peak value correspondingly. The fluctuation phenomenon of frictional coefficient is generated at high vertical force. The lateral forces show the apparent twofold and threefold symmetries on （110） and （111） planes, respectively. To obtain high surface quality, low polishing pressure and hard direction （〈 T10 〉 directions on （110） plane and 〈 112 〉 directions on （111） plane） should be selected, and to achieve high material removal rate, high polishing pressure and soft direction （〈001〉 directions on （110） plane and 〈 121 〉 directions on （111） plane） should be selected.

关 键 词：cadmium compounds single crystals nanoscratch tests frictional coefficient material removal rate surface quality ANISOTROPY 

分 类 号：O343.8[理学—固体力学] TG580.67[理学—力学]