硒化Cu,In双层膜制备CuInSe_2薄膜  

PREPARATION OF CuInSe_2 THIN FILMS BY SELENIZATION OF Cu, In DOUBLE LAYER FILMS

作　　者：王延来[1] 果世驹[2] 

机构地区：[1]内蒙古大学物理科学与技术学院内蒙古自治区高等学校半导体光伏技术重点实验室,呼和浩特010021 [2]北京科技大学粉末冶金研究所,北京100083

出　　处：《太阳能学报》2011年第7期969-973,共5页Acta Energiae Solaris Sinica

基　　金：内蒙古大学高层次人才引进科研启动项目(Z20090144;Z20090120)

摘　　要：采用超声波电沉积方法在钼衬底上制备了Cu,In双层膜,随后硒化得到了CuInAe_2薄膜。采用扫描电镜(AEM)、能谱仪(EDA)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。结果表明:利用超声波电沉积可以得到颗粒细小、均匀致密的Cu层和In层;采用不同的工艺参数可以调节双层膜的Cu/In比率;双层膜在130℃下,退火6h后进行硒化,可得到符合化学计量比的CuInAe_2薄膜。The CuInSe2 thin films were prepared on Mo substrate by selenization of Cu, In double layer films, which were obtained by ultrasonic-electrodepositing. Surface morphology, chemical composition and phases of the thin films sequence were investigated by scanning electron morphology（SEM）, energy dispersive spectroscopy （EDS） and X-ray diffraction （XRD）. Results shown that the compact Cu and In films of the fine grains can be obtained by ultrasonieelectrodepositing and the Cu/In ratio can be adjusted by different processing parameters; the ideal stoichiometric CulnSe2 film is obtained by selenization of Cu, In double layer films annealed at 130℃ for 6h.

关 键 词：CuInSe2薄膜 超声波电沉积 硒化 

分 类 号：O484.1[理学—固体物理]