高精度雪崩光电二极管偏置电源  

A High Precision Avalanche Photon Diode Bias Power Supply

作　　者：魏正军[1] 王金东[1] 

机构地区：[1]华南师范大学光子信息技术广东普通高校重点实验室,广东广州510006

出　　处：《通信电源技术》2011年第4期73-74,共2页Telecom Power Technology

摘　　要：目前,红外单光子的检测主要是采用工作在盖革模式下的InGaAs雪崩光电二极管(APD)来实现的:APD被偏置到雪崩击穿电压之上,这时APD的倍增因子趋近于无穷大,一个光生载流子将触发一个巨观的雪崩脉冲,供后级电路进行单光子判读。因为APD的倍增因子随偏置电压的增大而急剧增大,在盖革模式下,偏置电压的微小变化,都会导致APD输出特性的极大变化。文中提出了一种采用开关电源和线性稳压电源相结合的高精度APD偏置电源方案,测量电路输出电压为45V时,温度系数为1.1mV/℃,纹波电压为100μV。At present,the main method to detect an infrared single photon is achieved by using the InGaAs avalanche photon diodes（APD） at Geiger mode.When the APD is biased above its breakdown voltage,the multiplier factor approaches to infinity,so that a photon-induced avalanche will trigger a macroscopic pulse and carry out single photon identification for sequent circuit.At the Geiger mode,the multiplierin factor increases very fast with the increase of bias voltage,so a faint variety of bias voltage will result in a great change of the APD output performance.In this paper,we introduce a high precision avalanche photon diode bias power supply scheme,which combines the linear stabilized voltage supply and switch power supply and the measured results show that the temperature coefficient is 1.1 mV/℃,and the ripple voltage is 100 μV at the output voltage of 45 V.

关 键 词：单光子探测器 偏置电源 量子保密通信 

分 类 号：TM46[电气工程—电器]