2.4GHz SiGe BiCMOS功率放大器核心电路设计  

Design of Core Circuit of 2.4 GHz SiGe BiCMOS Power Amplifier

作　　者：苏杰[1] 张书霖[1] 陈磊[1] 赖宗声[1,2] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062 [2]华东师范大学纳光电集成与先进装备教育部工程研究中心,上海200062

出　　处：《微电子学》2011年第4期532-535,共4页Microelectronics

基　　金：国家科技重大专项"核嵌入式多模多频收发器关键IP硬核研究"(2009ZX01034-002-002-001-02)

摘　　要：基于宏力半导体有限公司最新的0.18μm SiGe BiCMOS 1P6M工艺,提出了一种应用于2.4-2.5 GHz频段的功率放大器,采用两级共发射极结构,优化了电路结构和元件参数,并使用片上和片外电感电容进行匹配。仿真结果表明,电路在2.4~2.5 GHz频率范围内,增益（S21）达到21 dB,输入和输出匹配（S11,S22）分别达-到17 dB和-22 dB,1 dB输出压缩点为16.7 dBm。在电源电压为3.3 V时,电路总消耗电流为275 mA。Based on GSMC SiGe BiCMOS 0.18 μm 1P6M process,a power amplifier for 2.4-2.5 GHz frequency band was proposed,for which two-stage common-emitter structure was used.Circuit structure and component parameters were optimized,and both on-chip and off-chip capacitors and inductors were matched.Simulation results demonstrated that the circuit achieved 21 dB of gain（S21） in frequencies between 2.4 GHz and 2.5 GHz,input and output impedance match both under-17 dB,and a 1-dB output compression point better than 16.7 dBm.The power amplifier consumed a current of 275 mA at 3.3 V supply voltage.

关 键 词：SIGE BICMOS 功率放大器 S参数 

分 类 号：TN431.1[电子电信—微电子学与固体电子学] TN722.75