一种低温度系数高驱动能力的带隙基准电路  

A Low Temperature Coefficient Bandgap Reference Source with Strong Driving Capability

作　　者：朱彤[1] 黄飞[1] 谢淼[1] 赖宗声[1,2] 张润曦[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062 [2]华东师范大学纳光电集成与先进装备教育部工程研究中心,上海200062

出　　处：《微电子学》2011年第4期545-549,共5页Microelectronics

基　　金：国家科技重大专项项目(2009ZX01034-002-002-001-02);上海市科委项目(08706200802;08700741300;09700713800);上海重点学科建设项目(B411)

摘　　要：基于Grace 0.18μm标准CMOS工艺,设计了一种带低压差线性稳压器的低温度系数带隙基准源。仿真结果表明,在1.8 V供电下,带隙基准电路从电源电压上抽取约340μA电流,在-40℃~85℃温度范围内,输出电压为900.24 mV±0.222 mV,温度系数达到5×10-6/℃,在1kHz频率下,电源抑制比约为51 dB。电路以LDO作为输出缓冲,最大可驱动15 pF负载电容。A low temperature coefficient bandgap reference source with low dropout regulator was designed,which was implemented in Grace＇s 0.18 μm standard CMOS technology.Simulation results showed that the circuit provided an output voltage of 900.24 mV±0.222 mV,while drawing about 340 μA of current from 1.8 V supply power,and it achieved a temperature coefficient of about 5×10-6/℃ in the temperature range from-40 ℃to 85 ℃,and a power supply rejection ratio of 51 dB at 1 kHz.With LDO as output buffer,the circuit was capable of driving a capacitive load up to 15 pF.

关 键 词：带隙基准源 温度系数 驱动能力 

分 类 号：TN722.58[电子电信—电路与系统]