Annealing effects on the formation of semiconducting Mg_2Si film using magnetron sputtering deposition  

作　　者：肖清泉 谢泉 陈茜 赵珂杰 余志强 沈向前 

机构地区：[1]Institute of Advanced Optoelectronic Materials and Technology,College of Science,Guizhou University

出　　处：《Journal of Semiconductors》2011年第8期5-9,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60766002);the Special Funds for International Cooperation of the Ministry of Science and Technology of China(No.2008DFA52210);the Funds of Information Industry Department of Guizhou Province,China(No.0831);the Natural Science Foundation of Guizhou Province,China(Nos.2059,2323);the Guiyang Science and Technology Bureau(No.15-3);the Introducing Talents Foundation for the Doctor of Guizhou University(No.032)

摘　　要：Semiconducting Mg_2Si films were synthesized on silicon（111） substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas,and the effects of heat treatment on the formation and microstructure of Mg_2Si films were investigated.The structural and morphological properties were investigated by X-ray diffraction（XRD） and scanning electron microscopy（SEM）,respectively.The results show that the crystal quality of Mg_2Si films depends strongly on the annealing temperature,the annealing time and the deposited magnesium film thickness.Annealing at 400°C for 5 h is optimal for the preparation of Mg_2Si film. XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms,and the evolution of surface features on growing films is very dependent on the annealing temperature and time.Semiconducting Mg_2Si films were synthesized on silicon（111） substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas,and the effects of heat treatment on the formation and microstructure of Mg_2Si films were investigated.The structural and morphological properties were investigated by X-ray diffraction（XRD） and scanning electron microscopy（SEM）,respectively.The results show that the crystal quality of Mg_2Si films depends strongly on the annealing temperature,the annealing time and the deposited magnesium film thickness.Annealing at 400°C for 5 h is optimal for the preparation of Mg_2Si film. XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms,and the evolution of surface features on growing films is very dependent on the annealing temperature and time.

关 键 词：thin film magnetron sputtering ANNEALING X-ray diffraction scanning electron microscopy 

分 类 号：O484.1[理学—固体物理]