Resonant tunnelling in nc-Si/SiO_2 multilayers at room temperature  

作　　者：陈德媛 

机构地区：[1]College of Electronic Science & Engineering,Nanjing University of Posts and Telecommunications [2]Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic materials,Department of Physics,Nanjing University

出　　处：《Journal of Semiconductors》2011年第8期23-26,共4页半导体学报（英文版）

基　　金：Project supported by the Jiangsu Provincial Foundation for Youths,China(No.09KJB510008) and the Research Foundation for Advanced Talents of Nanjing University of Post and Telecommunications,China(No.NY208056).

摘　　要：Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO_2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO_2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.

关 键 词：resonant tunnelling work function quantum dots 

分 类 号：TN304.2[电子电信—物理电子学]