Antireflection properties and solar cell application of silicon nanoscructures  

作　　者：岳会会 贾锐 陈晨 丁武昌 武德起 刘新宇 

机构地区：[1]Key Laboratory of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第8期55-60,共6页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703);the National Natural Science Foundation of China(Nos.60706023,90401002,60977050,90607022);the Chinese Academy of Solar Energy Action Plan(No.YZ0635)

摘　　要：Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching method.The silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52%and less than 8%are achieved,respectively.A 12.45%SiNWAs-textured solar cell（SC） with a short circuit current of 34.82 mA/cm^2 and open circuit voltage（K_（oc）） of 594 mV was fabricated on 125×125 mm^2 Si using a conventional process including metal grid printing.It is revealed that passivation is essential for hybrid structure textured SCs,and K_（oc） can be enlarged by 28.6%from 420 V to 560 mV after the passivation layer is deposited.The loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency（EQE） of samples with different fabrication processes.It is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching method.The silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52%and less than 8%are achieved,respectively.A 12.45%SiNWAs-textured solar cell（SC） with a short circuit current of 34.82 mA/cm^2 and open circuit voltage（K_（oc）） of 594 mV was fabricated on 125×125 mm^2 Si using a conventional process including metal grid printing.It is revealed that passivation is essential for hybrid structure textured SCs,and K_（oc） can be enlarged by 28.6%from 420 V to 560 mV after the passivation layer is deposited.The loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency（EQE） of samples with different fabrication processes.It is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.

关 键 词：antireflection properties silicon nanowires solar cells PASSIVATION 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB383[一般工业技术—材料科学与工程]