A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier  

作　　者：戈勤 陈晓娟 罗卫军 袁婷婷 庞磊 刘新宇 

机构地区：[1]Key Laboratory of Microwave Devices & Integrated Circuit,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第8期70-73,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)

摘　　要：A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_（ds） = 25 V and V_（gs） = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_（ds） = 25 V and V_（gs） = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.

关 键 词：KU-BAND AlGaN/GaN HEMTs power amplifier MONOLITHIC power density 

分 类 号：TN722.75[电子电信—电路与系统] TN304.23