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机构地区:[1]State Key Laboratory of ASIC and System,Fudan University
出 处:《Journal of Semiconductors》2011年第8期122-127,共6页半导体学报(英文版)
基 金:Project supported by the National High Technology Research and Development of China(No.2009AA011605)
摘 要:A highly linear,high output power,0.13μm CMOS direct conversion transmitter for wideband code division multiple access(WCDMA) is described.The transmitter delivers 6.8 dBm output power with 38 mA current consumption.With careful design on the resistor bank in the IQ-modulator,the gain step accuracy is within 0.1 dB,hence the image rejection ratio can be kept below—47 dBc for the entire output range.The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc,respectively,and the corresponding EVM is 3.6%.The overall gain can be programmed in 6 dB steps in a 66-dB range.A highly linear,high output power,0.13μm CMOS direct conversion transmitter for wideband code division multiple access(WCDMA) is described.The transmitter delivers 6.8 dBm output power with 38 mA current consumption.With careful design on the resistor bank in the IQ-modulator,the gain step accuracy is within 0.1 dB,hence the image rejection ratio can be kept below—47 dBc for the entire output range.The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc,respectively,and the corresponding EVM is 3.6%.The overall gain can be programmed in 6 dB steps in a 66-dB range.
关 键 词:WCDMA UMTS TRANSMITTER direct conversion CMOS
分 类 号:TN929.533[电子电信—通信与信息系统] TP213[电子电信—信息与通信工程]
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