γ radiation caused graphene defects and increased carrier density  

作　　者：韩买兴 姬濯宇 商立伟 陈映平 王宏 刘欣 李冬梅 刘明 

机构地区：[1]Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第8期288-292,共5页中国物理B（英文版）

基　　金：Project partially supported by the National Basic Research Program of China (Grant Nos.2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (Grant Nos.60825403,90607022,and 61001043)

摘　　要：We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

关 键 词：graphene γ ray radiation Raman spectrum DEFECTS 

分 类 号：O483[理学—固体物理]