A-188 V 7.2Ω·mm^2,P-channel high voltage device formed on an epitaxy-SIMOX substrate  

作　　者：吴丽娟 胡盛东 张波 罗小蓉 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]College of Communication Engineering,Chengdu University of Information Technology [3]College of Communication Engineering,Chongqing University

出　　处：《Chinese Physics B》2011年第8期327-334,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060);the Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904);the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721)

摘　　要：This paper proposes a new n＋-charge island （NCI） P-channel lateral double diffused metal-oxide semiconductor （LDMOS） based on silicon epitaxial separation by implantation oxygen （E-SIMOX） substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n＋-regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer （EI） is enhanced by these holes effectively, leading to an improved breakdown voltage （BV）. The VB and E! of the NCI P-channel LDMOS increase to -188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.This paper proposes a new n＋-charge island （NCI） P-channel lateral double diffused metal-oxide semiconductor （LDMOS） based on silicon epitaxial separation by implantation oxygen （E-SIMOX） substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n＋-regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer （EI） is enhanced by these holes effectively, leading to an improved breakdown voltage （BV）. The VB and E! of the NCI P-channel LDMOS increase to -188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.

关 键 词：dielectric buried layer breakdown voltage self-adapted holes epitaxy-SIMOX 

分 类 号：TN386.1[电子电信—物理电子学]