AlGaInP-Si glue bonded high performance light emitting diodes  

作　　者：陈依新 沈光地 郭伟玲 高志远 

机构地区：[1]Beijing Optoelectronic Technology Laboratory,Beijing University of Technology

出　　处：《Chinese Physics B》2011年第8期354-357,共4页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121);the National Basic Research Program of China (Grant No. 2006CB604900)

摘　　要：We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes （LEDs） onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that A1GaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes （LEDs） onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that A1GaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.

关 键 词：glue agglutinated AlGaInP LEDs Si substrate luminous intensity 

分 类 号：TN312.8[电子电信—物理电子学] TQ127.2[化学工程—无机化工]