Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier:an improved Schottky rectifier with better reverse characteristics  

作　　者：李惟一 茹国平 蒋玉龙 阮刚 

机构地区：[1]State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University

出　　处：《Chinese Physics B》2011年第8期376-383,共8页中国物理B（英文版）

基　　金：Project supported by the International Research Training Group "Materials and Concepts for Interconnects and Nanosystems"

摘　　要：An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I-V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier （TMBS） as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3×10^-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I-V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier （TMBS） as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3×10^-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.

关 键 词：Schottky rectifier pinch-off effect breakdown power device 

分 类 号：TN35[电子电信—物理电子学] TM46[电气工程—电器]