Top contact organic field effect transistors fabricated using a photolithographic process  

作　　者：王宏 姬濯宇 商立伟 刘兴华 彭应全 刘明 

机构地区：[1]Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University [2]Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第8期389-393,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 10974074,90607022,60676001,60676008,and 60825403)

摘　　要：This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.

关 键 词：organic field effect transistors top contact photolithographic 

分 类 号：TN386[电子电信—物理电子学]