Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study  

作　　者：毕志伟 胡振华 毛维 郝跃 冯倩 曹艳荣 高志远 张进成 马晓华 常永明 李志明 梅楠 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University [2]Life Sciences Research Centre,School of Life Sciences and Technology,Xidian University [3]School of Electronical & Machanical Engineering,Xidian University

出　　处：《Chinese Physics B》2011年第8期394-397,共4页中国物理B（英文版）

基　　金：Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009)

摘　　要：This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.

关 键 词：metal insulator-semiconductor high electron-mobility transistor GaN current collapse passivation 

分 类 号：TN32[电子电信—物理电子学] TN304.23