Multiferroic ZnO obtained by substituting oxygen with nitrogen  

作　　者：徐庆宇 温峥 高锦龙 吴迪 邱腾 唐少龙 徐明祥 

机构地区：[1]Department of Physics,Southeast University [2]Department of Materials Science and Engineering,Nanjing University [3]Department of Physics,Nanjing University

出　　处：《Chinese Physics B》2011年第8期425-428,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 50802041 and 50872050);the National Key Basic Research Program of China (Grant Nos. 2009CB929503 and 2010CB923404);NCET-09-0296 and Southeast University,and partially supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010421)

摘　　要：N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferro- magnetism has been observed in the film prepared at a substrate temperature of 500 ℃. The structural characterizations of X-ray diffraction, Raman, and X-ray photoelectron spectroscopy confirm the substitution of O by N in ZnO, which has been considered to be the origin of the observed ferromagnetism. Furthermore, ferroelectricity has been observed at room temperature by piezoelectric force microscopy, indicating the potential multiferroic applications.N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferro- magnetism has been observed in the film prepared at a substrate temperature of 500 ℃. The structural characterizations of X-ray diffraction, Raman, and X-ray photoelectron spectroscopy confirm the substitution of O by N in ZnO, which has been considered to be the origin of the observed ferromagnetism. Furthermore, ferroelectricity has been observed at room temperature by piezoelectric force microscopy, indicating the potential multiferroic applications.

关 键 词：MULTIFERROICS diluted magnetic semiconductor ZNO 

分 类 号：O484.1[理学—固体物理]