高响应度GaAs-MSM光电自混频面阵器件  

Facture of high responsivity GaAs-MSM optoelectronic self-mixing array

作　　者：张立臣[1,2] 汪韬[1] 尹飞[1] 杨瑾[1,2] 胡雅楠[1,2] 

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室,陕西西安710119 [2]中国科学院研究生院,北京100039

出　　处：《激光与红外》2011年第8期925-928,共4页Laser & Infrared

基　　金：国家自然科学基金(No.60707018);西部之光(No.2005ZD01)资助

摘　　要：采用LP-MOCVD方法生长并制作了GaAs基底肖特基势垒的MSM光电自混频器件。器件为面阵式结构,象元数目为32×32。对器件的光电参数进行测试分析,器件的响应度在偏压为3 V时,达到8.25 A/W,暗电流小于18 nA,对应的光电流密度为59.1μA/cm2,单点饱和输入光功率为1μW。测试瞬态响应,器件响应峰值上升沿为212 ps,半峰宽372 ps,对应响应频率大于1.65 GHz,具有很好的应用前景。This paper reports a metal-semiconductor-metal（MSM）Schottky photodiode（MSM-PD）array as an optoelectronic self-mixer factured on the extension layer which is grown on GaAs by using low pressure metal organic chemical vapor deposition（LP-MOCVD）method.There are 32×32 pixels in the device.Measured at 3 V biasing voltage,the responsivity of the device is 8.25 A/W,the dark current is under 18 nA,the consistency of photocurrent is 59.1 μA/cm2 and the input saturated power of light is 1 μW.Measuring the response to pulses,the risetime is 212 ps and the Full Wave at Half Maximum（FWHM）is 372 ps,so the corresponding 3-dB bandwidth is 1.65 GHz.

关 键 词：光电集成 光电自混频器 金属有机气象外延 GaAs-MSM 

分 类 号：TN248.21[电子电信—物理电子学]