还原再氧化工艺烧结温度对PTCR热敏材料性能的影响  

Effects of Sintering Temperature on Properties of PTCR Thermistor Prepared by Reduction-reoxidation Process

作　　者：傅邱云[1] 张波[1] 赵程程[1] 龚树萍[1] 周东祥[1,2] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]华中科技大学材料成形与模具技术国家重点实验室,湖北武汉430074

出　　处：《仪表技术与传感器》2011年第3期1-2,5,共3页Instrument Technique and Sensor

基　　金：国家"863"计划资助项目(SQ2008AA03Z4471960)

摘　　要：针对片式正温度系数热敏电阻（PTCR）传感器的还原再氧化制备工艺,研究了还原性气氛下烧结温度对热敏材料性能的影响。结果表明烧结温度在1 215-1 295℃范围内的还原气氛下烧结,瓷体均可半导化,瓷体的平均晶粒尺寸随烧结温度升高而增大,增大趋势由缓慢到逐步加快。再氧化处理前瓷体电阻率均小于10Ω.cm.再氧化后,瓷体的电阻率和升阻比都呈现出了不同程度的增长,增长幅度随烧结温度的升高而降低。此外,提高再氧化温度可提高升阻比同时会使瓷体电阻率增大。The effects of the sintering temperature on properties of PTCR thermistor prepared by reduction-reoxidation process were investigated.The results reveal that the resistivities of ceramics before reoxidation are less than 10 Ω·cm in the range of sintering temperature from 1 215 ℃ to 1 295 ℃,while their grain sizes increase much faster with the increase of sintering temperature.After reoxidation,the resistivities and PTC jumps of ceramics were enhanced,and the increasing amplitudes decrease with the increase of sintering temperature.In addition,the higher reoxidation temperature resulted in larger resistivities and higher PTC jumps.

关 键 词：热敏电阻 PTCR 还原再氧化 烧结温度 

分 类 号：TN373[电子电信—物理电子学]