半导体激光器线宽压窄及其特性研究  

Linewidth reduction of semiconductor lasers and study of linewidth property

作　　者：柴燕杰[1] 张汉一[1] 周炳琨[1] 吴群[1] 

机构地区：[1]清华大学无线电电子学系

出　　处：《光学学报》1989年第9期775-779,共5页Acta Optica Sinica

摘　　要：本文从理论上分析了外腔半导体激光器的线宽压窄原理,用延时自外差法对外腔半导体激光器的线宽特性进行了测量研究,得到了线宽反比于激光器输出功率及外腔反馈率的实验结果.In this paper, principles of linewidth reduction of external cavity semiconductor lasers are analyzed. Linewidth measurement is performed by the Delayed Self Heterodyne Method. It is obtained experimentally that laser linewidth is reversely proportional to laser output power and external cavity feedback level.

关 键 词：半导体激光器 线宽 外腔 

分 类 号：TN248.406[电子电信—物理电子学]