Low threshold voltage light-emitting diode in silicon-based standard CMOS technology  

作　　者：董赞 王伟 黄北举 张旭 关宁 陈弘达 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2011年第8期75-78,共4页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61036002,60536030, 60776024,60877035,61076023,and 90820002);the National "863" Program of China(Nos.2007AA04Z329, 2007AA04Z254,2011CB933203,and 2011CB933102)

摘　　要：Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.

关 键 词：CMOS integrated circuits Light emission Light sources Metallic compounds MOS devices Quantum theory Semiconducting silicon Semiconducting silicon compounds Semiconductor diodes Threshold voltage 

分 类 号：TN312.8[电子电信—物理电子学]