功率VDMOSFET核心工艺参数的优化研究  

Optimization and Research of the Power VDMOSFET Core Process Parameters

作　　者：赵志桓 姜维宾[1] 韩希方 张礼[1] 李惠军[2] 李东华[1] 

机构地区：[1]济南市半导体元件实验所,济南250014 [2]山东大学信息科学与工程学院,济南250100

出　　处：《半导体技术》2011年第9期693-696,共4页Semiconductor Technology

摘　　要：依据垂直双扩散场效应晶体管(VDMOSFET)的结构设计及参数要求,使用新一代Sentaurus系列TCAD工具对分立器件VDMOSFET进行分析。通过此工具可以对VDMOSFET的工艺结构级和半导体器件物理特性级进行可制造性设计及验证。本工作重点分析了能够影响功率VDMOSFET导通电阻、阈值电压等各种因素及其之间的关系,对沟道区、p+区和n+源区掺杂浓度,以及注入后的退火温度和时间等工艺参数进行优化设置。结果表明,通过使用Sentaurus系列TCAD工具对VDMOSFET器件进行模拟与分析所得出的参数能够达到IR公司的IRF140的设计水平。Based on the structural design and parameter requirements of the VDMSOFET, the discrete devices VDMOSFET was analysed with a new generation of Sentaurus TCAD tools. Through these tools, the VDMOSFET＇ s process structure class and semiconductor device physics class were designed for manufacturing and verified. The various conditions affecting the power VDMOSFET resistance, threshold voltage and the relationships were analyzed. The doping density of the channel region, p＋ region and n＋ source were optimized. The annealing temperature and time also were optimized. Results show that, through the use of the Sentaurus TCAD tools for computer simulation and model comparing VDMOSFET device can achieve the parameters in the same level of IR＇ s IRF140.

关 键 词：功率 优化 仿真 工艺参数 可制造性设计 验证 

分 类 号：TN386.1[电子电信—物理电子学]