双纳米硅p层优化非晶硅太阳能电池  

Optimization of Double Nanocrystalline Silicon p-layers for Amorphous Silicon Solar Cells

作　　者：刘石勇[1] 曾湘波[1] 彭文博[1] 姚文杰[1] 谢小兵[1] 杨萍[1] 王超[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所材料科学重点实验室,北京100083

出　　处：《材料工程》2011年第8期5-7,13,共4页Journal of Materials Engineering

基　　金：国家重点基础研究发展计划资助项目(2006CB202604);国家自然科学基金资助项目(60576036);中国科学院知识创新工程重要方向资助项目(1KGCX2-YW-383-1)

摘　　要：采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在高功率密度、高反应气压和低衬底温度下制备出不同氢稀释比RH的硅薄膜。高分辨透射电镜(High-Resolution Transmission ElectronMicroscopy,HRTEM)图像与拉曼谱显示在较高氢稀释比条件下生长的薄膜为纳米硅(nanocrystalline silicon,nc-Si)薄膜,纳米硅颗粒尺寸约为3～5nm。对不同氢稀释比下纳米硅薄膜光学带隙的变化趋势进行了研究。结果表明:随着氢稀释比的增加,纳米硅薄膜的光学带隙逐渐增加。提出采用双纳米硅p层结构改善非晶硅太阳能电池,发现双纳米硅p层电池效率比单纳米硅p层的电池效率提高了17%。The plasma enhanced chemical vapor deposition（PECVD） system was used for fabricating the silicon films with different hydrogen dilution ratio（RH） under the high power density,high pressure and low substrate temperature.High-resolution transmission electron microscopy（HRTEM） and Raman spectroscopy indicated that the thin films were nanocrystalline silicon（nc-Si） films which contained nanocrystallites with grain size around 3-5nm.The effects of the RH on the optical band gaps of the nc-Si thin films were studied.The results showed that the optical band gaps of the nc-Si thin films increased with the increased in the RH.An double nc-Si p-layers structure was developed to improve the i/p interface in hydrogenated amorphous silicon（a-Si∶H） solar cells.The efficiency of the double nc-Si p-layers cell was improved by 17% compared its counterpart of the single nc-Si p-layer cell.

关 键 词：纳米硅 氢稀释比 光学带隙 

分 类 号：TK511[动力工程及工程热物理—热能工程]