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出 处:《原子与分子物理学报》2011年第4期755-759,共5页Journal of Atomic and Molecular Physics
基 金:四川省青年科技基金(2011JQ0053)
摘 要:提出一种有机半导体二极管电流电压关系的解析表达式.该表达式是基于Pasveer等人[Phys.Rev.Lett.94,206601(2005)]的迁移率模型建立的,其中考虑了影响有机半导体载流子输运最重要的因素,包括温度、载流子浓度和电场强度.将Pasveer等人迁移率公式中的栽流子浓度和电场强度用常数迁移率下严格解计算的平均值代入,然后将得到的迁移率取代Mott-Gurney电流电压关系中的常数迁移率从而得到解析电流电压表达式.将新解析表达式应用于三种材料制作的有机二极管,计算结果与实验数据符合很好,表明解析表达式是合理的.An analytical current-voltage relationship diodes. The model is based on the mobility model is proposed for single-carrier organic light emitting of Pasveer etal. EPhys. Rev. Lett. 94 (2005), 206601-] that accounts for the most important physical quantities that influence the current transport in organic disordered semiconductors, temperature, carrier concentration, and electric field. The full-ana- lytical formulation is obtained through replacing the constant mobility in Mott-Gurney relationship by the mobility model of Pasveer et al. with carrier concentration and electric field being replaced by their average values evaluated using the strict solutions at constant mobility, and leads to a simple analytical expression. It was validated with experimental data collected from different materials in a wide range of operating conditions.
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