退火处理对W:Bi_4Ge_3O_(12)和Bi_(12)GeO_(20)晶体发光性能的影响  

Effects of Annealing Treatment on the Photoluminescence Properties of W:Bi_4Ge_3O_(12) and Bi_(12)GeO_(20) Crystals

作　　者：俞平胜[1,2] 苏良碧[2] 唐慧丽[2] 郭鑫[2] 赵衡煜[1,2] 杨秋红[1] 徐军[2] 

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海201800

出　　处：《发光学报》2011年第8期825-829,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60778036;60938001)资助项目

摘　　要：通过提拉法制备了W∶Bi4Ge3O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等。W∶Bi4Ge3O12的可见光发光强度比纯Bi4Ge3O12有所增强,而且N2中退火处理对W∶Bi4Ge3O12发光有进一步增强作用。Bi12GeO20在N2中退火处理后在745 nm附近有发光峰,其衰减时间为10μs左右。两种晶体退火处理后发光均增强,认为是低价Bi离子发光所致。W∶Bi4Ge3O12 and Bi12GeO20 crystals were prepared by Czochralski（Cz） method.The absorption,photoluminescence（PL） and PL lifetime spectra were investigated.The results revealed the PL intensity of W∶Bi4Ge3O12 was stronger than that of Bi12GeO20,and annealing in N2 can increase the PL intensity of W∶Bi4Ge3O12.Near infrared PL（at about 745 nm） was observed in Bi12GeO20 annealed in N2,and the lifetime was about 10 μs.The mechanisms of luminescence in W∶Bi4Ge3O12 and annealed Bi12GeO20 was discussed.

关 键 词：W∶Bi4Ge3O12 Bi12GeO20 光致发光 退火 

分 类 号：O482.31[理学—固体物理]