基于0.5m GaAs PHEMT工艺的单刀十掷射频开关模块  

A SP10T RF Antenna Switch Module Based on 0.5 μm GaAs PHEMT

作　　者：赵鹏[1] 许正荣[1] 李晓鹏[1] 钱峰[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第4期377-382,共6页Research & Progress of SSE

摘　　要：描述了采用0.5μm GaAs PHEMT工艺进行单刀十掷射频开关模块的设计工作。模块核心部件为SP10T射频天线开关芯片,内置了用于GSM系统的两条发射通路的谐波抑制低通滤波器,和用于开关控制的驱动电路,改善了线性度。模块实现指标:GSM发射通路插入损耗不大于1.25 dB,其余各通路插损不大于1.35 dB;GSM收发通路间隔离度不小于43 dB,与UMTS通路间隔离度不小于40 dB;GSM两个发射通路二次谐波抑制比分别大于66dBc和54 dBc。The paper presents the design of single-pole ten-throw（SP10T） multi-band RF switch module with 0.5 μm GaAs PHEMT technology.The core cell of the module is a SP10T RF switch.Two harmonic suppression low-pass filters and a drive circuit are included in the module,which improve harmonic suppression ratio.The insertion loss of GSM transmitting path is less than 1.25 dB,while other paths are less than 1.35 dB;the isolation between GSM transmitting path and receiving path is more than 43 dB,and the isolation between GSM transmitting path and UMTS paths is more than 40 dB;the second harmonic suppression ratio of two GSM transmitting paths is more than 66 dBc and 54 dBc,respectively.

关 键 词：单刀十掷射频开关 插入损耗 隔离度 功率容限 谐波抑制度 低通滤波器 升压驱动电路 

分 类 号：TN386[电子电信—物理电子学] TN713.4